Advancements in Atomic Layer Deposition Techniques for Ultra-Thin Gate Dielectrics in Nanoscale Semiconductor Devices. ISCSITR- INTERNATIONAL JOURNAL OF ENGINEERING AND TECHNOLOGY - ISSN (online): 3067-7351, [S. l.], v. 3, n. 1, p. 8–14, 2022. Disponível em: https://iscsitr.in/index.php/ISCSITR-IJET/article/view/ISCSITR-IJET_03_01_002.. Acesso em: 8 oct. 2025.